 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AOL1424 N-Channel Enhancement Mode Field Effect Transistor General Description The AOL1424 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V,while retaining a 20V VGS(MAX) rating. It is ESD protected.This device is suitable for use as a load switch. Standard Product AOL1424 is Pb-free (meets ROHS & Sony 259 specifications). Features VDS (V) = 30V ID = 70A (VGS = 10V) RDS(ON) < 5.4m (VGS = 10V) RDS(ON) < 8m (VGS = 4.5V) ESD Protected UIS Tested! Rg, Ciss,Coss,Crss Tested Ultra SO-8TM Top View D Fits SOIC8 footprint ! G D S Bottom tab connected to drain G Maximum 30 20 70 ID IDM IDSM IAR H S Absolute Maximum Ratings T A=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain B Current Pulsed Drain Current Continuous Drain A Current Avalanche Current H C Units V V A TC=25C TC=100C TA=25C TA=70C 50 120 23 18 30 135 50 25 5 3 -55 to 175 A A mJ W W C Repetitive avalanche energy L=0.3mH TC=25C Power Dissipation B Power Dissipation A EAR PD PDSM TJ, TSTG TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Case D Symbol A A t 10s Steady-State Steady-State RJA RJC Typ 20 45 2.5 Max 24 55 3.0 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55C VDS=0V, VGS= 16V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C 1.4 120 4.5 6.3 6.5 67 0.7 1.0 70 1803 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 387 238 1.3 36 VGS=10V, VDS=15V, ID=20A 19 3.9 8.7 7.6 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 6.4 27 8.5 27 17 33 2 48 2170 5.4 7.6 8.0 1.8 Min 30 1 5 10 2.5 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. H. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse. Rev3: July 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 5V 90 6V ID (A) 60 20 ID(A) VGS=3.5V 15 10 30 3V 25C 5 0 0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 VDS (Volts) Figure 1: On-Region Characteristics 10 Normalized On-Resistance 1.8 VGS=4.5V 1.6 1.4 1.2 1 0.8 0.6 0 5 10 15 20 25 30 -60 -30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 15 ID=20A 1.0E+02 1.0E+01 1.0E+00 125C IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 0 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 25C -40C 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=20A VGS=4.5V ID=20A VGS(Volts) Figure 2: Transfer Characteristics 125 -40C 4.5V 4V 30 25 VDS=5V 0 8 RDS(ON) (m) 6 4 VGS=10V 2 RDS(ON) (m) 10 5 Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 500 0 0 10 20 30 40 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 VDS=15V ID=20A 3500 3000 Capacitance (pF) 2500 2000 1500 1000 Coss Crss Ciss 1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited DC 10s 100 1m 10ms 0.1 Power (W) 140 120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 100 1000 TJ(Max)=175C TC=25C 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton T 0.01 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1424 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 Power Dissipation (W) 50 40 30 20 10 0 0 25 50 75 100 125 150 175 0 0 25 50 75 100 125 150 175 T CASE (C) Figure 13: Current De-rating (Note B) T CASE (C) Figure 12: Power De-rating (Note B) Current rating ID(A) 0.01 0.1 1 60 80 40 20 140 120 100 Power (W) 80 60 40 20 0 0.001 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) 10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W 0.001 0.01 0.1 1 PD Ton T 100 1000 0.01 Single Pulse 0.001 0.00001 0.0001 10 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
Price & Availability of AOL1424
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |